REDUCTION METHOD OF VERTICAL TEMPERATURE GRADIENT DURING IN GAAS CRYSTAL GROWTH PULLER

A single crystal growth method is provided to obtain high qualities from a GaAs single crystal by restraining the generation of a polycrystalline material due to a thermal shock using a reflector arranged at a portion between a growth furnace and an airtight chamber. A reflector(24) is loaded at a p...

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Hauptverfasser:	KIM, JIN HO, OH, MYUNG HWAN, PARK, BONG WOO, AHN, HEE SEOK, KIM, JIN HEE, PARK, SUNG JUN, NAM, HYUN SEOK, YU, JE GUEN, LEE, HAE CHEON, SONG, JOON SUK
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	A single crystal growth method is provided to obtain high qualities from a GaAs single crystal by restraining the generation of a polycrystalline material due to a thermal shock using a reflector arranged at a portion between a growth furnace and an airtight chamber. A reflector(24) is loaded at a predetermined portion between a growth furnace(10) and an airtight chamber(11) in a single crystal growing process assisted by a Czochralski method. The loaded reflector is capable of reducing a vertical temperature gradient and preventing the generation of a polycrystalline material due to a thermal shock, so that a high quality GaAs single crystal is obtained.