METHOD OF FORMING METAL WIRING IN FLASH MEMORY DEVICE

A method for forming a metal line of a semiconductor device is provided to prevent the generation of interference between metal lines and to reduce fabrication costs by performing a PE(Plasma Enhanced)-CVD(Chemical Vapor Deposition) using an amorphous carbon with a low dielectric constant. A plurali...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	KIM, JAE WOON, CHO, WHEE WON
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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