METHOD OF FORMING METAL WIRING IN FLASH MEMORY DEVICE

A method for forming a metal line of a semiconductor device is provided to prevent the generation of interference between metal lines and to reduce fabrication costs by performing a PE(Plasma Enhanced)-CVD(Chemical Vapor Deposition) using an amorphous carbon with a low dielectric constant. A plurality of metal lines are formed on a semiconductor substrate(100). A first interlayer dielectric(102) is formed on the entire surface of the resultant structure by using an amorphous carbon and planarized to fill a gap between the metal lines. A second interlayer dielectric(114) is formed on the resultant structure. The metal line is formed like a stacked structure composed of a first barrier metal, a metal line material layer and a second barrier metal.