DIRECT BONDED CHIP SCALE PACKAGED LIGHT EMITTING DIODE AND FABRICATION METHOD THEREOF
A chip scale packaged light emitting diode and its fabricating method are provided to obtain two individual light emitting elements by connecting an n type first electrode with an n type second electrode and separating chips from each other. A chip scale packaged light emitting diode includes a subs...
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Format: | Patent |
Sprache: | eng |
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Zusammenfassung: | A chip scale packaged light emitting diode and its fabricating method are provided to obtain two individual light emitting elements by connecting an n type first electrode with an n type second electrode and separating chips from each other. A chip scale packaged light emitting diode includes a substrate(200) and n type and p type semiconductor layers(201,203) formed on the substrate. An n type first electrode(205) and a p type first electrode(204) are formed on the n type semiconductor layer and the p type semiconductor layer, respectively. A first protective layer is formed on the n type first electrode and the p type first electrode. An n type second electrode(210) and a p type second electrode(209) are electrically connected through the first protective layer to the n type first electrode and the p type first electrode. |
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