DIRECT BONDED CHIP SCALE PACKAGED LIGHT EMITTING DIODE AND FABRICATION METHOD THEREOF

A chip scale packaged light emitting diode and its fabricating method are provided to obtain two individual light emitting elements by connecting an n type first electrode with an n type second electrode and separating chips from each other. A chip scale packaged light emitting diode includes a subs...

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Hauptverfasser: KIM, SANG MOOK, LEE, JIN HONG, KIM, KANG HO, OH, HWA SEOP, BAEK, JONG HYEOB, LEE, SEUNG JAE, JEONG, TAK, YOM, HONG SEO, YU, YOUNG MOON, KIM, YOON SEOK, JHIN, JUNG GUN, LEE, SANG HERN
Format: Patent
Sprache:eng
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Zusammenfassung:A chip scale packaged light emitting diode and its fabricating method are provided to obtain two individual light emitting elements by connecting an n type first electrode with an n type second electrode and separating chips from each other. A chip scale packaged light emitting diode includes a substrate(200) and n type and p type semiconductor layers(201,203) formed on the substrate. An n type first electrode(205) and a p type first electrode(204) are formed on the n type semiconductor layer and the p type semiconductor layer, respectively. A first protective layer is formed on the n type first electrode and the p type first electrode. An n type second electrode(210) and a p type second electrode(209) are electrically connected through the first protective layer to the n type first electrode and the p type first electrode.