SACRIFICIAL SUBSTRATE FOR ETCHING

A method of etching a silicon substrate is described. The method includes bonding a first silicon substrate (200) to a sacrificial silicon substrate (240, 241). The first silicon substrate (200) is etched. A pressure is applied at an interface of the first silicon substrate (200) and the sacrificial...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	DEMING STEPHEN R, BIRKMEYER JEFFREY
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MICROSTRUCTURAL TECHNOLOGY PERFORMING OPERATIONS PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS SEMICONDUCTOR DEVICES TRANSPORTING WORKING CEMENT, CLAY, OR STONE WORKING STONE OR STONE-LIKE MATERIALS
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	A method of etching a silicon substrate is described. The method includes bonding a first silicon substrate (200) to a sacrificial silicon substrate (240, 241). The first silicon substrate (200) is etched. A pressure is applied at an interface of the first silicon substrate (200) and the sacrificial silicon substrate (240, 241) to cause the first silicon substrate (200) to separate from the sacrificial silicon substrate (240, 241). An apparatus having metal blades (620) can be used to separate the substrates.