HEAT TREATMENT SYSTEM AND METHOD

A heat treatment system and a method thereof are provided to obtain an uniform thickness of a layer and to lower heat temperature by supplying a preheated process gas to a reaction vessel. A heat treatment system includes a heating unit installed at a gas introduction path in order to heat a process...

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Bibliographische Detailangaben
Hauptverfasser:	MIURA KAZUTOSHI, ASANO TAKANOBU, ISHII KATSUTOSHI, HOSHI GEORGE, YAMAMOTO HIROYUKI
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	A heat treatment system and a method thereof are provided to obtain an uniform thickness of a layer and to lower heat temperature by supplying a preheated process gas to a reaction vessel. A heat treatment system includes a heating unit installed at a gas introduction path in order to heat a process gas before supplying the process gas to a reaction vessel, and a hole formed at the gas introduction path between the heating unit and the reaction vessel. The pressure of the heating unit is higher than the internal pressure of the reaction vessel since the pressure loss is caused in the hole. The process gas is supplied through the gas introduction path to the heating unit. The process gas is preheated at the predetermined temperature. The preheated process gas is supplied to the reaction vessel.