IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME

An image sensor is provided to increase efficiency by using every received light, and to prevent crosstalk between adjacent pixels by preventing an adjacent pixel from being influenced. A photodiode is formed in a semiconductor substrate. An insulation layer of a multilayered structure supplies an air wave guide(47) for opening the upper edge part of the photodiode, formed on the semiconductor substrate. A shield metal is formed on a predetermined surface of the insulation layer. The insulation layer includes first, second and third insulation layers. The first insulation layer is formed on the semiconductor substrate outside the photodiode. The second insulation layer supplies the first insulation layer and a predetermined empty space at the edge of the photodiode, formed on the photodiode. An empty space between the first and the second insulation layers is partially filled with the third insulation layer to form an air wave guide.