NON VOLATILE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME

A nonvolatile memory device and a method for manufacturing the same are provided to prevent the variation of CD(Critical Dimension) of a gate by covering a first dielectric film of ONO structure using a second dielectric film. A floating gate(22) is formed on a semiconductor substrate(20) to isolate the substrate. A first dielectric film(23) of ONO(Oxide-Nitride-Oxide) structure is formed on the floating gate. A second dielectric film(24) made of oxide is formed on the floating gate to cover the first dielectric film. A select gate(25a) is formed on the second dielectric film. A source/drain region(28) is then formed in the substrate.