METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

A method for fabricating a semiconductor device is provided to prevent warpage of a first wafer by attaching a second wafer to the back surface of a first wafer and by growing a silicon epitaxial layer on the front surface of the first wafer. An oxide layer(110) can be formed on the back surface of...

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Bibliographische Detailangaben
Hauptverfasser: KIM, KI HYEON, BAE, JAE SIK, LEE, JI SUNG, KIM, YOUNG NAM, KIM, GI JUNG, KANG, DONG MIN, LIM, YOUNG SAM, KANG, YUN DEOK, CHOI, KYOUNG JIN
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:A method for fabricating a semiconductor device is provided to prevent warpage of a first wafer by attaching a second wafer to the back surface of a first wafer and by growing a silicon epitaxial layer on the front surface of the first wafer. An oxide layer(110) can be formed on the back surface of a first wafer(100). To the back surface of the first wafer doped with impurities of first density, a second wafer doped with impurities of second density lower than the first density is attached. A silicon epitaxial layer(140) is grown on the front surface of the first wafer by using the second wafer as a diffusion preventing layer for preventing the impurities doped into the first wafer from being diffused.