METHOD FOR MANUFACTURING IMAGE SENSOR

A method for fabricating an image sensor is provided to control the generation of dark current of an image sensor by increasing the potential barrier of a channel stop region and by blocking the inflow path of dark current. A pad oxide layer(21) and a pad nitride layer(22) are sequentially formed on a substrate(20). The pad nitride layer, the pad oxide layer and the substrate are partially etched to form a trench. A first ion implantation process using B or BF2 is performed to form a channel stop region(27) on the interface of the substrate exposed by the trench. The impurity ions implanted into the channel stop region are activated to perform a second ion implantation process so that the potential barrier of the channel stop region is increased. An RTP is performed to cure the defect generated in the second ion implantation process.