CRYSTAL GROWING CONDITION PREDICTION METHOD AND SINGLE CRYSTAL INGOT GROWING METHOD USING THE SAME

A method for predicting a crystal growth condition is provided to predict an oxygen density value caused by a variation of a crystal growth condition by using an MsMc value obtained by a simulation wherein Ms is the momentum of a seed crystal fluid and Mc is the momentum of a silicon melt fluid of a crucible. An MsMc value is defined by a ratio of the momentum of a seed crystal fluid and the momentum of a silicon melt fluid of a crucible such that the momentum is obtained from a growth simulation of a silicon single crystal ingot according to a variation of a predetermined crystal growth condition. A relation of a predetermined crystal growth condition with respect to the MsMc value obtained from the simulation is displayed as a graph. The present crystal growth condition is predicted by the MsMc value of a predetermined point during a crystal growth process. The predetermined crystal growth condition can be the intensity of a magnetic field, the flowrate of gas and the density of a specific dopant.