INTEGRATED CIRCUIT AND METHOD FOR MANUFACTURING

INTEGRATED CIRCUIT AND METHOD FOR MANUFACTURING

A semiconductor structure (5), fluid ejection device, and methods for manufacturing the same are provided, such that a contact to a substrate (10) is formed from a conductive layer (30).

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: DODD SIMON, BRYANT FRANK R, MCMAHON TERRY E, HINDMAN GREGORY T, WANG S. JONATHAN, MILLER RICHARD TODD, TOM DENNIS W
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator DODD SIMON
BRYANT FRANK R
MCMAHON TERRY E
HINDMAN GREGORY T
WANG S. JONATHAN
MILLER RICHARD TODD
TOM DENNIS W
description A semiconductor structure (5), fluid ejection device, and methods for manufacturing the same are provided, such that a contact to a substrate (10) is formed from a conductive layer (30).
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_KR20070059184A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>KR20070059184A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_KR20070059184A3</originalsourceid><addsrcrecordid>eNrjZND39AtxdQ9yDHF1UXD2DHIO9QxRcPRzUfB1DfHwd1Fw8w9S8HX0C3VzdA4JDfL0c-dhYE1LzClO5YXS3AzKbq4hzh66qQX58anFBYnJqXmpJfHeQUYGBuYGBqaWhhYmjsbEqQIAnMUm4w</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>INTEGRATED CIRCUIT AND METHOD FOR MANUFACTURING</title><source>esp@cenet</source><creator>DODD SIMON ; BRYANT FRANK R ; MCMAHON TERRY E ; HINDMAN GREGORY T ; WANG S. JONATHAN ; MILLER RICHARD TODD ; TOM DENNIS W</creator><creatorcontrib>DODD SIMON ; BRYANT FRANK R ; MCMAHON TERRY E ; HINDMAN GREGORY T ; WANG S. JONATHAN ; MILLER RICHARD TODD ; TOM DENNIS W</creatorcontrib><description>A semiconductor structure (5), fluid ejection device, and methods for manufacturing the same are provided, such that a contact to a substrate (10) is formed from a conductive layer (30).</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2007</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20070611&amp;DB=EPODOC&amp;CC=KR&amp;NR=20070059184A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20070611&amp;DB=EPODOC&amp;CC=KR&amp;NR=20070059184A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>DODD SIMON</creatorcontrib><creatorcontrib>BRYANT FRANK R</creatorcontrib><creatorcontrib>MCMAHON TERRY E</creatorcontrib><creatorcontrib>HINDMAN GREGORY T</creatorcontrib><creatorcontrib>WANG S. JONATHAN</creatorcontrib><creatorcontrib>MILLER RICHARD TODD</creatorcontrib><creatorcontrib>TOM DENNIS W</creatorcontrib><title>INTEGRATED CIRCUIT AND METHOD FOR MANUFACTURING</title><description>A semiconductor structure (5), fluid ejection device, and methods for manufacturing the same are provided, such that a contact to a substrate (10) is formed from a conductive layer (30).</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2007</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZND39AtxdQ9yDHF1UXD2DHIO9QxRcPRzUfB1DfHwd1Fw8w9S8HX0C3VzdA4JDfL0c-dhYE1LzClO5YXS3AzKbq4hzh66qQX58anFBYnJqXmpJfHeQUYGBuYGBqaWhhYmjsbEqQIAnMUm4w</recordid><startdate>20070611</startdate><enddate>20070611</enddate><creator>DODD SIMON</creator><creator>BRYANT FRANK R</creator><creator>MCMAHON TERRY E</creator><creator>HINDMAN GREGORY T</creator><creator>WANG S. JONATHAN</creator><creator>MILLER RICHARD TODD</creator><creator>TOM DENNIS W</creator><scope>EVB</scope></search><sort><creationdate>20070611</creationdate><title>INTEGRATED CIRCUIT AND METHOD FOR MANUFACTURING</title><author>DODD SIMON ; BRYANT FRANK R ; MCMAHON TERRY E ; HINDMAN GREGORY T ; WANG S. JONATHAN ; MILLER RICHARD TODD ; TOM DENNIS W</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20070059184A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2007</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>DODD SIMON</creatorcontrib><creatorcontrib>BRYANT FRANK R</creatorcontrib><creatorcontrib>MCMAHON TERRY E</creatorcontrib><creatorcontrib>HINDMAN GREGORY T</creatorcontrib><creatorcontrib>WANG S. JONATHAN</creatorcontrib><creatorcontrib>MILLER RICHARD TODD</creatorcontrib><creatorcontrib>TOM DENNIS W</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>DODD SIMON</au><au>BRYANT FRANK R</au><au>MCMAHON TERRY E</au><au>HINDMAN GREGORY T</au><au>WANG S. JONATHAN</au><au>MILLER RICHARD TODD</au><au>TOM DENNIS W</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>INTEGRATED CIRCUIT AND METHOD FOR MANUFACTURING</title><date>2007-06-11</date><risdate>2007</risdate><abstract>A semiconductor structure (5), fluid ejection device, and methods for manufacturing the same are provided, such that a contact to a substrate (10) is formed from a conductive layer (30).</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_KR20070059184A
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title INTEGRATED CIRCUIT AND METHOD FOR MANUFACTURING
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-26T17%3A30%3A53IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=DODD%20SIMON&rft.date=2007-06-11&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EKR20070059184A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true