SUBSTRATE PROCESSING APPARATUS

A substrate processing apparatus has a heating means (207) provided so as to externally surround a processing chamber (201) for receiving a substrate (200); a pair of electrodes (269) for plasma-activating processing gas; a coupling coil (311) connected between the electrode; a protective container...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	MIYASHITA TOMOYASU, ISHIMARU NOBUO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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Beschreibung
Zusammenfassung:	A substrate processing apparatus has a heating means (207) provided so as to externally surround a processing chamber (201) for receiving a substrate (200); a pair of electrodes (269) for plasma-activating processing gas; a coupling coil (311) connected between the electrode; a protective container (275) for air-tightly receiving the pair of electrodes (269) and the coupling coil (311) and having an inert gas environment set in its inside; and an induction coil (312) provided outside the protective container (275), inductively coupled to the coupling coil (311), and subjected to application of high-frequency electric power.