BARIUM TITANATE THIN FILMS WITH TITANIUM PARTIALLY SUBSTITUTED BY ZIRCONIUM, TIN OR HAFNIUM
Disclosed are high permittivity (dielectric constant), thin film CSD barium titanate based dielectric precursor solution comprising barium acetate, a titanium source and a B site cation source. The dielectrics show capacitance as a function of temperature that better satisfies the X7R requirements....
Gespeichert in:
| Hauptverfasser: | , , |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | IHLEFELD JON FREDRICK MARIA JON PAUL BORLAND WILLIAM J |
| description | Disclosed are high permittivity (dielectric constant), thin film CSD barium titanate based dielectric precursor solution comprising barium acetate, a titanium source and a B site cation source. The dielectrics show capacitance as a function of temperature that better satisfies the X7R requirements. A method of making a capacitor with this barium titanate based dielectric precursor solution is disclosed. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_KR20070043675A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>KR20070043675A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_KR20070043675A3</originalsourceid><addsrcrecordid>eNrjZIh2cgzyDPVVCPEMcfRzDHFVCPHw9FNw8_TxDVYI9wzxgEiAVAQ4BoV4Ovr4RCoEhzoFA4VDQ1xdFJwiFaI8g5z9QUp0gIr9FPyDFDwc3UB8HgbWtMSc4lReKM3NoOzmGuLsoZtakB-fWlyQmJyal1oS7x1kZGBgbmBgYmxmbupoTJwqAHk6Mz4</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>BARIUM TITANATE THIN FILMS WITH TITANIUM PARTIALLY SUBSTITUTED BY ZIRCONIUM, TIN OR HAFNIUM</title><source>esp@cenet</source><creator>IHLEFELD JON FREDRICK ; MARIA JON PAUL ; BORLAND WILLIAM J</creator><creatorcontrib>IHLEFELD JON FREDRICK ; MARIA JON PAUL ; BORLAND WILLIAM J</creatorcontrib><description>Disclosed are high permittivity (dielectric constant), thin film CSD barium titanate based dielectric precursor solution comprising barium acetate, a titanium source and a B site cation source. The dielectrics show capacitance as a function of temperature that better satisfies the X7R requirements. A method of making a capacitor with this barium titanate based dielectric precursor solution is disclosed.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CABLES ; CONDUCTORS ; ELECTRICITY ; INSULATORS ; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES</subject><creationdate>2007</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20070425&DB=EPODOC&CC=KR&NR=20070043675A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76516</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20070425&DB=EPODOC&CC=KR&NR=20070043675A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>IHLEFELD JON FREDRICK</creatorcontrib><creatorcontrib>MARIA JON PAUL</creatorcontrib><creatorcontrib>BORLAND WILLIAM J</creatorcontrib><title>BARIUM TITANATE THIN FILMS WITH TITANIUM PARTIALLY SUBSTITUTED BY ZIRCONIUM, TIN OR HAFNIUM</title><description>Disclosed are high permittivity (dielectric constant), thin film CSD barium titanate based dielectric precursor solution comprising barium acetate, a titanium source and a B site cation source. The dielectrics show capacitance as a function of temperature that better satisfies the X7R requirements. A method of making a capacitor with this barium titanate based dielectric precursor solution is disclosed.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CABLES</subject><subject>CONDUCTORS</subject><subject>ELECTRICITY</subject><subject>INSULATORS</subject><subject>SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2007</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZIh2cgzyDPVVCPEMcfRzDHFVCPHw9FNw8_TxDVYI9wzxgEiAVAQ4BoV4Ovr4RCoEhzoFA4VDQ1xdFJwiFaI8g5z9QUp0gIr9FPyDFDwc3UB8HgbWtMSc4lReKM3NoOzmGuLsoZtakB-fWlyQmJyal1oS7x1kZGBgbmBgYmxmbupoTJwqAHk6Mz4</recordid><startdate>20070425</startdate><enddate>20070425</enddate><creator>IHLEFELD JON FREDRICK</creator><creator>MARIA JON PAUL</creator><creator>BORLAND WILLIAM J</creator><scope>EVB</scope></search><sort><creationdate>20070425</creationdate><title>BARIUM TITANATE THIN FILMS WITH TITANIUM PARTIALLY SUBSTITUTED BY ZIRCONIUM, TIN OR HAFNIUM</title><author>IHLEFELD JON FREDRICK ; MARIA JON PAUL ; BORLAND WILLIAM J</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20070043675A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2007</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CABLES</topic><topic>CONDUCTORS</topic><topic>ELECTRICITY</topic><topic>INSULATORS</topic><topic>SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES</topic><toplevel>online_resources</toplevel><creatorcontrib>IHLEFELD JON FREDRICK</creatorcontrib><creatorcontrib>MARIA JON PAUL</creatorcontrib><creatorcontrib>BORLAND WILLIAM J</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>IHLEFELD JON FREDRICK</au><au>MARIA JON PAUL</au><au>BORLAND WILLIAM J</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>BARIUM TITANATE THIN FILMS WITH TITANIUM PARTIALLY SUBSTITUTED BY ZIRCONIUM, TIN OR HAFNIUM</title><date>2007-04-25</date><risdate>2007</risdate><abstract>Disclosed are high permittivity (dielectric constant), thin film CSD barium titanate based dielectric precursor solution comprising barium acetate, a titanium source and a B site cation source. The dielectrics show capacitance as a function of temperature that better satisfies the X7R requirements. A method of making a capacitor with this barium titanate based dielectric precursor solution is disclosed.</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng |
| recordid | cdi_epo_espacenet_KR20070043675A |
| source | esp@cenet |
| subjects | BASIC ELECTRIC ELEMENTS CABLES CONDUCTORS ELECTRICITY INSULATORS SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES |
| title | BARIUM TITANATE THIN FILMS WITH TITANIUM PARTIALLY SUBSTITUTED BY ZIRCONIUM, TIN OR HAFNIUM |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-19T20%3A57%3A00IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=IHLEFELD%20JON%20FREDRICK&rft.date=2007-04-25&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EKR20070043675A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |