BARIUM TITANATE THIN FILMS WITH TITANIUM PARTIALLY SUBSTITUTED BY ZIRCONIUM, TIN OR HAFNIUM

BARIUM TITANATE THIN FILMS WITH TITANIUM PARTIALLY SUBSTITUTED BY ZIRCONIUM, TIN OR HAFNIUM

Disclosed are high permittivity (dielectric constant), thin film CSD barium titanate based dielectric precursor solution comprising barium acetate, a titanium source and a B site cation source. The dielectrics show capacitance as a function of temperature that better satisfies the X7R requirements....

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: IHLEFELD JON FREDRICK, MARIA JON PAUL, BORLAND WILLIAM J
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
CABLES
CONDUCTORS
ELECTRICITY
INSULATORS
SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES
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Beschreibung
Zusammenfassung:Disclosed are high permittivity (dielectric constant), thin film CSD barium titanate based dielectric precursor solution comprising barium acetate, a titanium source and a B site cation source. The dielectrics show capacitance as a function of temperature that better satisfies the X7R requirements. A method of making a capacitor with this barium titanate based dielectric precursor solution is disclosed.