COPPER DOPED MAGNETIC SEMICONDUCTORS
A semi-conducting material, a method for producing the material, and ways of implementing the material, wherein said material is doped with Cu or CuO, and is ferromagnetic at least at one temperature in the range between -55° C. and 125° C. Typically the material may comprise GaP or GaN.
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Format: | Patent |
Sprache: | eng |
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Zusammenfassung: | A semi-conducting material, a method for producing the material, and ways of implementing the material, wherein said material is doped with Cu or CuO, and is ferromagnetic at least at one temperature in the range between -55° C. and 125° C. Typically the material may comprise GaP or GaN. |
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