METHOD OF MANUFACTURING SILICON WAFER

METHOD OF MANUFACTURING SILICON WAFER

A method for fabricating a silicon wafer is provided to increase the density of vacancy in the bulk of a silicon wafer and improve the density of BMD(bulk micro defect) by depositing a material layer like silicon nitride on the back surface of the silicon wafer and by applying compressive stress to...

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Bibliographische Detailangaben
Hauptverfasser: CHO, KYOO CHUL, CHOI, SOO YEOL, PARK, YOUNG SOO, CHA, HYE JIN, KANG, TAE SOO, KIM, HEE SUNG, HAN, SHIN HYEOK
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:A method for fabricating a silicon wafer is provided to increase the density of vacancy in the bulk of a silicon wafer and improve the density of BMD(bulk micro defect) by depositing a material layer like silicon nitride on the back surface of the silicon wafer and by applying compressive stress to the back surface of the silicon wafer. A material layer is deposited on the back surface of a silicon wafer to apply tensile stress to the front surface of the silicon wafer(S105). An RTA process is performed to generate vacancies in the silicon wafer(S110). A heat treatment is performed on the silicon wafer to deposit an oxygen BMD in the silicon wafer(S115). The material layer is made of a material for applying compressive stress to the back surface of the silicon wafer.