METHOD OF FORMING A METAL LINE IN SEMICONDUCTOR DEVICE

A method for forming a metal line of a semiconductor device is provided to prevent the damage of a metal film and to restrain a contact hole from being excessively etched by using an etch stop buffer layer. A lower metal line is formed on a semiconductor substrate(10). An etch stop buffer layer(28) is formed on the lower metal line alone. An etch stop layer and an interlayer dielectric are sequentially formed on the resultant structure. A contact hole for exposing the etch stop buffer layer to the outside is formed on the resultant structure by patterning selectively the interlayer dielectric and the etch stop layer. An upper metal line for contacting the lower metal line fills the contact hole.