METHOD FOR FABRICATING CMOS IMAGE SENSOR

A method for manufacturing a CMOS image sensor is provided to improve photo characteristics by using a D2 annealing process for removing dangling bonds. A gate pattern of a transfer transistor is formed on a substrate(40). The gate pattern is composed of a silicon oxide layer and a silicon electrode layer. A photodiode(43) is formed at one side of the gate pattern. A floating node is formed at the other side of the gate pattern. A D2 annealing process is performed on the resultant structure to remove dangling bonds existing at an interface between a gate oxide layer and the substrate.