METHOD AND APPARATUS FOR REMOVING PHOTORESIST FROM A SUBSTRATE

A method and system for removing photoresist from a substrate in a plasma processing system comprising: introducing a process gas comprising NxOy, wherein x, y represent integers greater than or equal to unity. Additionally, the process chemistry can further comprise the addition of an inert gas, su...

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Bibliographische Detailangaben
Hauptverfasser:	INAZAWA KOICHIRO, BALASUBRAMANIAM VAIDYANATHAN
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	A method and system for removing photoresist from a substrate in a plasma processing system comprising: introducing a process gas comprising NxOy, wherein x, y represent integers greater than or equal to unity. Additionally, the process chemistry can further comprise the addition of an inert gas, such as a Noble gas (i.e., He, Ne, Ar, Kr, Xe, Rn). The present invention further presents a method for forming a feature in a thin film on a substrate, wherein the method comprises: forming a dielectric layer on a substrate; forming a photoresist pattern on the dielectric layer; transferring the photoresist pattern to the dielectric layer by etching; and removing the photoresist from the dielectric layer using a process gas comprising NXOy, wherein x and y are integers greater than or equal to unity.