METHOD OF FORMING SILICON DIOXIDE FILM AND SYSTEM FOR CARRYING OUT THE SAME

A method and an apparatus of forming a silicon oxide film are provided to increase a film forming speed by reducing a thickness of a nitride film and forming the nitride film at a low temperature. An apparatus for forming a silicon oxide film includes a reaction chamber(131), a reaction chamber heater(132), a supply unit(105), and a gas heater(102). The reaction chamber receives an object to be treated. A silicon layer is formed at least on a surface of the object to be treated. The reaction chamber heater raises a temperature of the reaction chamber to a predetermined temperature. The supply unit supplies gas, which is made of hydrogen and chlorine, and process gas, which contains oxygen, into the reaction chamber. The gas heater is arranged on the supply unit and heats up the process gas before the process gas is supplied into the reaction chamber, to generate humidity.