METHOD OF IMPROVING POST-DEVELOP PHOTORESIST PROFILE ON A DEPOSITED DIELECTRIC FILM

A method and apparatus for improving the post-development photoresist profile on a deposited dielectric film. The method includes depositing a TERA film having tunable optical and etch resistant properties on a substrate using a plasma-enhanced chemical vapor deposition process and post processing t...

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Bibliographische Detailangaben
Hauptverfasser: BABICH KATHERINA, FUKIAGE NORIAKI
Format: Patent
Sprache:eng
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Zusammenfassung:A method and apparatus for improving the post-development photoresist profile on a deposited dielectric film. The method includes depositing a TERA film having tunable optical and etch resistant properties on a substrate using a plasma-enhanced chemical vapor deposition process and post processing the TERA film using a plasma process. The apparatus includes a chamber having an upper electrode coupled to a first RF source and a substrate holder coupled to a second RF source; and a showerhead for providing multiple precursors and process gasses.