METHODS AND APPARATUS FOR LASER DICING
An apparatus and method of dicing a microelectronic device wafer by laser ablating at least an interconnected layer portion of the microelectronic device wafer in the presence of an anion plasma, wherein the anion plasma reacts with debris from the laser ablation to form a reaction gas.
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Format: | Patent |
Sprache: | eng |
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Zusammenfassung: | An apparatus and method of dicing a microelectronic device wafer by laser ablating at least an interconnected layer portion of the microelectronic device wafer in the presence of an anion plasma, wherein the anion plasma reacts with debris from the laser ablation to form a reaction gas. |
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