PHOTORESIST STRIPPING COMPOSITION AND METHODS OF FABRICATING SEMICONDUCTOR DEVICE HAVING PHOTORESIST REMOVING PROCESS USING THE SAME

A photoresist stripping composition and a method of fabricating a semiconductor device using the photoresist stripping composition are provided. The photoresist stripping composition is made of a mixed solution of acetone and isopropyl alcohol. A preferred volume ratio of acetone to isopropyl alcoho...

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Hauptverfasser: RHO, HYUN WOOK, PARK, SANG JINE, KIM, JAE JIN, PARK, KWANG MYEON
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creator RHO, HYUN WOOK
PARK, SANG JINE
KIM, JAE JIN
PARK, KWANG MYEON
description A photoresist stripping composition and a method of fabricating a semiconductor device using the photoresist stripping composition are provided. The photoresist stripping composition is made of a mixed solution of acetone and isopropyl alcohol. A preferred volume ratio of acetone to isopropyl alcohol is in a range of about 50:50 to about 95:5.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title PHOTORESIST STRIPPING COMPOSITION AND METHODS OF FABRICATING SEMICONDUCTOR DEVICE HAVING PHOTORESIST REMOVING PROCESS USING THE SAME
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