PHOTORESIST STRIPPING COMPOSITION AND METHODS OF FABRICATING SEMICONDUCTOR DEVICE HAVING PHOTORESIST REMOVING PROCESS USING THE SAME

PHOTORESIST STRIPPING COMPOSITION AND METHODS OF FABRICATING SEMICONDUCTOR DEVICE HAVING PHOTORESIST REMOVING PROCESS USING THE SAME

A photoresist stripping composition and a method of fabricating a semiconductor device using the photoresist stripping composition are provided. The photoresist stripping composition is made of a mixed solution of acetone and isopropyl alcohol. A preferred volume ratio of acetone to isopropyl alcoho...

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Bibliographische Detailangaben
Hauptverfasser: RHO, HYUN WOOK, PARK, SANG JINE, KIM, JAE JIN, PARK, KWANG MYEON
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A photoresist stripping composition and a method of fabricating a semiconductor device using the photoresist stripping composition are provided. The photoresist stripping composition is made of a mixed solution of acetone and isopropyl alcohol. A preferred volume ratio of acetone to isopropyl alcohol is in a range of about 50:50 to about 95:5.