SEMICONDUCTOR DEVICE HAVING A COMPOSITE BARRIER LAYER AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE HAVING A COMPOSITE BARRIER LAYER AND METHOD OF MANUFACTURING THE SAME

A semiconductor device may include a gate structure having a gate insulation layer formed on a substrate, and a gate electrode formed on the gate insulation layer. A composite barrier layer may be formed on the gate structure.

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Bibliographische Detailangaben
Hauptverfasser: PARK, HONG BAE, JIN, BEOM JUN, PARK, SEONG GEON, SHIN, YU GYUN, KANG, SANG BOM
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A semiconductor device may include a gate structure having a gate insulation layer formed on a substrate, and a gate electrode formed on the gate insulation layer. A composite barrier layer may be formed on the gate structure.