NONVOLITILE MEMORY DEVICE COMPRISING TWO RESISTANCE MATERIAL LAYER

NONVOLITILE MEMORY DEVICE COMPRISING TWO RESISTANCE MATERIAL LAYER

A nonvolatile memory device having two or more resistors and methods of forming and using the same. A nonvolatile memory device having two resistance layers, and more particularly, to a nonvolatile memory device formed and operated using a resistance layer having memory switching characteristics and...

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Bibliographische Detailangaben
Hauptverfasser: PARK, YOON DONG, AHN, SEUNG EON, SEO, SUN AE, SEO, DAVID, YOO, IN KYEONG, JOUNG, YONG SOO, KIM, HEY YOUNG, LEE, MYOUNG JAE
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:A nonvolatile memory device having two or more resistors and methods of forming and using the same. A nonvolatile memory device having two resistance layers, and more particularly, to a nonvolatile memory device formed and operated using a resistance layer having memory switching characteristics and a resistance layer having threshold switching characteristics. The nonvolatile semiconductor memory device may include a lower electrode; a first resistance layer having at least two resistance characteristics formed on the lower electrode, a second resistance layer having threshold switching characteristics formed on the first resistance layer, and an upper electrode formed on the second resistance layer.