GATE OXIDE, DEVICE, GATE OXIDE FORMING METHOD AND GATE OXIDE FORMING MATERIAL

GATE OXIDE, DEVICE, GATE OXIDE FORMING METHOD AND GATE OXIDE FORMING MATERIAL

PURPOSE: To provide a gate oxide film hardly causing a leak of a charge and having a high dielectric constant and to provide, in its turn, an element having this gate oxide film. CONSTITUTION: The gate oxide film is constituted by using one or two or more chemical elements selected from the group co...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: ISHIKAWA MASATO, OSHITA YOSHIO, HOSHINO ASAKO, MACHIDA HIDEAKI, KADA TAKESHI
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:PURPOSE: To provide a gate oxide film hardly causing a leak of a charge and having a high dielectric constant and to provide, in its turn, an element having this gate oxide film. CONSTITUTION: The gate oxide film is constituted by using one or two or more chemical elements selected from the group consisting of Zr, Hf and Ln and by using Si, O and N.