STORAGE APPARATUS AND SEMICONDUCTOR APPARATUS

STORAGE APPARATUS AND SEMICONDUCTOR APPARATUS

A storage apparatus includes memory devices each having a storage element with a characteristic that the application of an electric signal not lower than a first threshold signal allows the storage element to shift from a high resistance value state to a low resistance value state, and that the appl...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: TSUSHIMA TOMOHITO, NAGAO HAJIME, OKAZAKI NOBUMICHI, OTSUKA WATARU, SAGARA TSUTOMU, MORI HIRONOBU, HACHINO HIDENARI, NAKASHIMA CHIEKO
Format: Patent
Sprache:eng
Schlagworte:
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Beschreibung
Zusammenfassung:A storage apparatus includes memory devices each having a storage element with a characteristic that the application of an electric signal not lower than a first threshold signal allows the storage element to shift from a high resistance value state to a low resistance value state, and that the application of an electric signal not lower than a second threshold signal, which has a polarity different from that of the first threshold signal, allows the storage element to shift form a low resistance value state to a high resistance value state, and a circuit element connected to the storage element in series to be a load; wherein the memory devices are arranged in a matrix and one terminal of each of the memory devices is connected to a common line; and wherein an intermediate potential between a power supply potential and a ground potential is applied to the common line.