SEMICONDUCTOR WAFER WITH LAYER STRUCTURE WITH LOW WARP AND BOW, AND PROCESS FOR PRODUCING IT

SEMICONDUCTOR WAFER WITH LAYER STRUCTURE WITH LOW WARP AND BOW, AND PROCESS FOR PRODUCING IT

Semiconductor wafers with a diameter of at least 200 mm comprise a silicon carrier wafer, an electrically insulating layer and a semiconductor layer located thereon, the semiconductor wafer having been produced by means of a layer transfer process comprising at least one RTA step, wherein the semico...

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Bibliographische Detailangaben
Hauptverfasser: BLIETZ MARKUS, HUBER ANDREAS, HOELZL ROBERT, WAHLICH REINHOLD
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Semiconductor wafers with a diameter of at least 200 mm comprise a silicon carrier wafer, an electrically insulating layer and a semiconductor layer located thereon, the semiconductor wafer having been produced by means of a layer transfer process comprising at least one RTA step, wherein the semiconductor wafer has a warp of less than 30 μm, a DeltaWarp of less than 30 μm, a bow of less than 10 μm and a DeltaBow of less than 10 μm. Processes for the production of a semiconductor wafer of this type require specific heat treatment regimens.