POLISHING COMPOSITIONS FOR CONTROLLING METAL INTERCONNECT REMOVAL RATE IN SEMICONDUCTOR WAFERS

A polishing composition suitable for polishing semiconductor substrates comprises 0.001 to 2 wt % of a thermoplastic polymer; and 0.001 to 1 wt % of polyvinylpyrrolidone; wherein varying the weight ratio of thermoplastic polymer to the polyvinylpyrrolidone controls the removal rate of the non-ferrou...

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Bibliographische Detailangaben
Hauptverfasser:	QUANCI JOHN, LAVOIE JR. RAYMOND LEE, YE QIANQIU
Format:	Patent
Sprache:	eng
Schlagworte:	ADHESIVES AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F,C08G BASIC ELECTRIC ELEMENTS CHEMISTRY COMPOSITIONS BASED THEREON DECORATIVE ARTS DRESSING OR CONDITIONING OF ABRADING SURFACES DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GENERAL PROCESSES OF COMPOUNDING GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS MOSAICS NATURAL RESINS ORGANIC MACROMOLECULAR COMPOUNDS PAINTS PAPERHANGING PERFORMING OPERATIONS POLISHES POLISHING PRODUCING DECORATIVE EFFECTS SEMICONDUCTOR DEVICES TARSIA WORK THEIR PREPARATION OR CHEMICAL WORKING-UP TRANSPORTING WORKING-UP
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Beschreibung
Zusammenfassung:	A polishing composition suitable for polishing semiconductor substrates comprises 0.001 to 2 wt % of a thermoplastic polymer; and 0.001 to 1 wt % of polyvinylpyrrolidone; wherein varying the weight ratio of thermoplastic polymer to the polyvinylpyrrolidone controls the removal rate of the non-ferrous interconnect.