ABRASIVE COMPOUND FOR SEMICONDUCTOR PLANARIZATION
An abrasive compound for semiconductor planarization containing cerium oxide particles and water is disclosed wherein the content of coarse cerium oxide particles not less than 3 mum in the solid is not more than 500 ppm (in weight), preferably not more than 100 ppm. More preferably, D99 of the ceri...
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| creator | CHINONE KANSHI |
| description | An abrasive compound for semiconductor planarization containing cerium oxide particles and water is disclosed wherein the content of coarse cerium oxide particles not less than 3 mum in the solid is not more than 500 ppm (in weight), preferably not more than 100 ppm. More preferably, D99 of the cerium oxide particles (99 volume% of the entire particles in the abrasive compound) is not more than 1 mum. This abrasive compound enables to reduce scratches and is capable of precisely polishing the surface of a semiconductor substrate at high speed during the wiring step in semiconductor device production. |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_KR20060034726A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>KR20060034726A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_KR20060034726A3</originalsourceid><addsrcrecordid>eNrjZDB0dApyDPYMc1Vw9vcN8A_1c1Fw8w9SCHb19XT293MJdQ4B8gJ8HP0cgzyjHEM8_f14GFjTEnOKU3mhNDeDsptriLOHbmpBfnxqcUFicmpeakm8d5CRgYGZgYGxibmRmaMxcaoAEmgnxA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>ABRASIVE COMPOUND FOR SEMICONDUCTOR PLANARIZATION</title><source>esp@cenet</source><creator>CHINONE KANSHI</creator><creatorcontrib>CHINONE KANSHI</creatorcontrib><description>An abrasive compound for semiconductor planarization containing cerium oxide particles and water is disclosed wherein the content of coarse cerium oxide particles not less than 3 mum in the solid is not more than 500 ppm (in weight), preferably not more than 100 ppm. More preferably, D99 of the cerium oxide particles (99 volume% of the entire particles in the abrasive compound) is not more than 1 mum. This abrasive compound enables to reduce scratches and is capable of precisely polishing the surface of a semiconductor substrate at high speed during the wiring step in semiconductor device production.</description><language>eng</language><subject>ADHESIVES ; BASIC ELECTRIC ELEMENTS ; CHEMISTRY ; DRESSING OR CONDITIONING OF ABRADING SURFACES ; DYES ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS ; GRINDING ; MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING ; MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE ; METALLURGY ; MISCELLANEOUS APPLICATIONS OF MATERIALS ; MISCELLANEOUS COMPOSITIONS ; NATURAL RESINS ; PAINTS ; PERFORMING OPERATIONS ; POLISHES ; POLISHING ; POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH ; SEMICONDUCTOR DEVICES ; SKI WAXES ; TRANSPORTING</subject><creationdate>2006</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20060424&DB=EPODOC&CC=KR&NR=20060034726A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20060424&DB=EPODOC&CC=KR&NR=20060034726A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>CHINONE KANSHI</creatorcontrib><title>ABRASIVE COMPOUND FOR SEMICONDUCTOR PLANARIZATION</title><description>An abrasive compound for semiconductor planarization containing cerium oxide particles and water is disclosed wherein the content of coarse cerium oxide particles not less than 3 mum in the solid is not more than 500 ppm (in weight), preferably not more than 100 ppm. More preferably, D99 of the cerium oxide particles (99 volume% of the entire particles in the abrasive compound) is not more than 1 mum. This abrasive compound enables to reduce scratches and is capable of precisely polishing the surface of a semiconductor substrate at high speed during the wiring step in semiconductor device production.</description><subject>ADHESIVES</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMISTRY</subject><subject>DRESSING OR CONDITIONING OF ABRADING SURFACES</subject><subject>DYES</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS</subject><subject>GRINDING</subject><subject>MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING</subject><subject>MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE</subject><subject>METALLURGY</subject><subject>MISCELLANEOUS APPLICATIONS OF MATERIALS</subject><subject>MISCELLANEOUS COMPOSITIONS</subject><subject>NATURAL RESINS</subject><subject>PAINTS</subject><subject>PERFORMING OPERATIONS</subject><subject>POLISHES</subject><subject>POLISHING</subject><subject>POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SKI WAXES</subject><subject>TRANSPORTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2006</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDB0dApyDPYMc1Vw9vcN8A_1c1Fw8w9SCHb19XT293MJdQ4B8gJ8HP0cgzyjHEM8_f14GFjTEnOKU3mhNDeDsptriLOHbmpBfnxqcUFicmpeakm8d5CRgYGZgYGxibmRmaMxcaoAEmgnxA</recordid><startdate>20060424</startdate><enddate>20060424</enddate><creator>CHINONE KANSHI</creator><scope>EVB</scope></search><sort><creationdate>20060424</creationdate><title>ABRASIVE COMPOUND FOR SEMICONDUCTOR PLANARIZATION</title><author>CHINONE KANSHI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20060034726A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2006</creationdate><topic>ADHESIVES</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMISTRY</topic><topic>DRESSING OR CONDITIONING OF ABRADING SURFACES</topic><topic>DYES</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS</topic><topic>GRINDING</topic><topic>MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING</topic><topic>MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE</topic><topic>METALLURGY</topic><topic>MISCELLANEOUS APPLICATIONS OF MATERIALS</topic><topic>MISCELLANEOUS COMPOSITIONS</topic><topic>NATURAL RESINS</topic><topic>PAINTS</topic><topic>PERFORMING OPERATIONS</topic><topic>POLISHES</topic><topic>POLISHING</topic><topic>POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SKI WAXES</topic><topic>TRANSPORTING</topic><toplevel>online_resources</toplevel><creatorcontrib>CHINONE KANSHI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>CHINONE KANSHI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>ABRASIVE COMPOUND FOR SEMICONDUCTOR PLANARIZATION</title><date>2006-04-24</date><risdate>2006</risdate><abstract>An abrasive compound for semiconductor planarization containing cerium oxide particles and water is disclosed wherein the content of coarse cerium oxide particles not less than 3 mum in the solid is not more than 500 ppm (in weight), preferably not more than 100 ppm. More preferably, D99 of the cerium oxide particles (99 volume% of the entire particles in the abrasive compound) is not more than 1 mum. This abrasive compound enables to reduce scratches and is capable of precisely polishing the surface of a semiconductor substrate at high speed during the wiring step in semiconductor device production.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY DRESSING OR CONDITIONING OF ABRADING SURFACES DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS PERFORMING OPERATIONS POLISHES POLISHING POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH SEMICONDUCTOR DEVICES SKI WAXES TRANSPORTING |
| title | ABRASIVE COMPOUND FOR SEMICONDUCTOR PLANARIZATION |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-24T21%3A35%3A08IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=CHINONE%20KANSHI&rft.date=2006-04-24&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EKR20060034726A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |