ABRASIVE COMPOUND FOR SEMICONDUCTOR PLANARIZATION

An abrasive compound for semiconductor planarization containing cerium oxide particles and water is disclosed wherein the content of coarse cerium oxide particles not less than 3 mum in the solid is not more than 500 ppm (in weight), preferably not more than 100 ppm. More preferably, D99 of the ceri...

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Bibliographische Detailangaben
1. Verfasser:	CHINONE KANSHI
Format:	Patent
Sprache:	eng
Schlagworte:	ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY DRESSING OR CONDITIONING OF ABRADING SURFACES DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS PERFORMING OPERATIONS POLISHES POLISHING POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH SEMICONDUCTOR DEVICES SKI WAXES TRANSPORTING
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Beschreibung
Zusammenfassung:	An abrasive compound for semiconductor planarization containing cerium oxide particles and water is disclosed wherein the content of coarse cerium oxide particles not less than 3 mum in the solid is not more than 500 ppm (in weight), preferably not more than 100 ppm. More preferably, D99 of the cerium oxide particles (99 volume% of the entire particles in the abrasive compound) is not more than 1 mum. This abrasive compound enables to reduce scratches and is capable of precisely polishing the surface of a semiconductor substrate at high speed during the wiring step in semiconductor device production.