METHOD FOR FORMING NON-SALICIDE RESISTOR

METHOD FOR FORMING NON-SALICIDE RESISTOR

A method of forming a non-salicide resistor is provided to obtain an accurate value of the non-salicide resistor in a process design process by preventing an outer diffusion phenomenon of boron. A polysilicon layer(102) is formed on a semiconductor substrate(100). An HLD(High-temperature Low-pressur...

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Bibliographische Detailangaben
1. Verfasser: HWANG, CHOONG HO
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A method of forming a non-salicide resistor is provided to obtain an accurate value of the non-salicide resistor in a process design process by preventing an outer diffusion phenomenon of boron. A polysilicon layer(102) is formed on a semiconductor substrate(100). An HLD(High-temperature Low-pressure Deposition oxide layer) is deposited on the polysilicon layer. The HLD is patterned to form a predetermined shape. A low-temperature U+D cleaning process for the patterned HLD layer is performed. A salicide region(110) and a non-salicide layer(108) are formed by performing a Ti sputtering process and an annealing process.