CYLINDER TYPE CAPACITOR OF SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FOR SECURING LARGE CAPACITANCE

PURPOSE: A cylinder type capacitor of a semiconductor device and a manufacturing method thereof are provided to secure large capacitance by using an enhanced storage node electrode structure composed of a first conductive layer and a second conductive layer. CONSTITUTION: A mold oxide layer and an etch stop layer are selectively patterned on a substrate(200) to define a storage node electrode forming region. A first conductive layer(240b) is formed along the upper surface of the resultant structure. A spacer is formed at sidewalls of the first conductive layer within the region of storage node electrode formed. A second conductive layer(260a) for filling a space between the spacers is formed thereon. Etching for completing a storage node electrode is performed thereon and the mold oxide layer is removed therefrom. A dielectric film(270) and a third conductive layer(280) are sequentially formed thereon.