PLASMA CHAMBER HAVING MULTIPLE RF SOURCE FREQUENCIES FOR PROCESSING SEMICONDUCTOR SUBSTRATES

PURPOSE: A plasma chamber having multiple RF source frequencies is provided to process semiconductor substrates by using multiple RF sources and a common matching circuit. CONSTITUTION: A reaction chamber(100) includes a workpiece support part(105) having a chamber wall and supporting a semiconducto...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	GRIMARD, DENNIS S, YE, YAN, MA, DIANA X, HOFFMAN, DANIEL J, PATERSON, ALEXANDER, SHANNON, STEVEN C, TAKAKURA, KEIKO, PANAGOPOULOS, THEODOROS, YANG, JANG GYOO
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY PLASMA TECHNIQUE PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	PURPOSE: A plasma chamber having multiple RF source frequencies is provided to process semiconductor substrates by using multiple RF sources and a common matching circuit. CONSTITUTION: A reaction chamber(100) includes a workpiece support part(105) having a chamber wall and supporting a semiconductor workpiece. An overhead electrode(125) is installed at an upper part of the workpiece support part and includes a part of the chamber wall. A plurality of RF generators(150,220) are used for supplying power to the overhead electrode by using one frequency, respectively. A fixed impedance matching element is connected between the RF generators and the overhead electrode. The overhead electrode has a reactance to form resonance with plasma at an electrode-plasma resonant frequency near to each frequency of the RF generators.