IMAGE SENSOR HAVING HIGH SENSITIVITY FOR INCREASING ON-CURRENT AND IMPROVING CHARGE TRANSFER EFFICIENCY

PURPOSE: An image sensor having high sensitivity is provided to increase on-current and improve charge transfer efficiency by extending a width of an active region of a transfer gate. CONSTITUTION: A silicon substrate(100) is divided into an active region and a field region by an STI(Shallow Trench Isolation) process. The active region is indented by the STI process. An indented gate oxide layer(108) is formed on the indented active region of the silicon substrate. A transfer transistor poly layer(110) is formed on the intended gate oxide layer. A spacer(112) is formed on a lateral part of the transfer transistor poly layer.