METHOD FOR MANUFACTURING MASK FOR EVAPORATION, CAPABLE OF IMPROVING PROCESS PRECISION AND WORKABILITY AND PREVENTING DEFORMATION OF THIN SUBSTRATE, AND MASK FOR EVAPORATION

PURPOSE: A method and a mask for evaporation are provided to achieve improved process precision and workability, and prevent a deformation of a thin substrate. CONSTITUTION: A method comprises a step of using a thin substrate material(30) which is formed by stacking a first metal layer(32) and a sec...

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Bibliographische Detailangaben
Hauptverfasser:	OMOTO, KOICHI, TONOGAI, SEIJI, ICHINOBE, NOBUO, MAEOKA, ATSUSHI
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC HEATING ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PURPOSE: A method and a mask for evaporation are provided to achieve improved process precision and workability, and prevent a deformation of a thin substrate. CONSTITUTION: A method comprises a step of using a thin substrate material(30) which is formed by stacking a first metal layer(32) and a second metal layer(34), and an intermediate layer(36) interposed between the first and second metal layers, forming an aperture portion at the first metal layer so as to allow for passage of an evaporation material by etching the thin substrate material, and forming an aperture portion at the second metal layer such that a rim portion remains in the region other than the aperture portion of the first metal layer; and a step of removing the exposed portion of the intermediate layer by melting the exposed portion through the use of a predetermined liquid chemical.