SEMICONDUCTOR LASER ELEMENT HAVING CLEAN-CUT CROSS SECTION
PURPOSE: A semiconductor laser element is provided to clean-cut a cross section normal to a resonance layer and to improve a manufacturing yield by using a scribing method. CONSTITUTION: A semiconductor laser element includes a mesa structure having a laser resonance layer(130) and clad layers(122)...
Gespeichert in:
Hauptverfasser: | , |
---|---|
Format: | Patent |
Sprache: | eng ; kor |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | PURPOSE: A semiconductor laser element is provided to clean-cut a cross section normal to a resonance layer and to improve a manufacturing yield by using a scribing method. CONSTITUTION: A semiconductor laser element includes a mesa structure having a laser resonance layer(130) and clad layers(122) on upper and lower portion of the resonance layer. The semiconductor laser element includes a curved corner, a current implant ridge, and a passivation layer having a contact hole(151a). The curved corner is formed on the lower portion of the mesa structure and is connected to the substrate. The current implant ridge is exposed from a surface of the mesa structure. The contact hole corresponds to a peak surface of the current implant ridge on the mesa structure. |
---|