METHOD AND CIRCUIT FOR CONTROLLING SYNCHRONOUS SELF REFRESH OF SEMICONDUCTOR MEMORY DEVICE WITHOUT AN ADDITIONAL CLOCK BUFFER FOR CONTROLLING ESCAPE OF A SELF REFRESH

PURPOSE: A method and a circuit for controlling a synchronous self refresh of a semiconductor memory device are provided to control the escape of the self refresh by synchronizing with the clock during the escape of the self refresh without installing an additional clock buffer. CONSTITUTION: A circuit for controlling a synchronous self refresh of a semiconductor memory device includes a self refresh entry circuit unit(30), a clock buffer control unit(60), a self refresh escape circuit unit and a self refresh signal generation unit(50). The self refresh entry circuit unit generates a self refresh entry signal by synchronizing to the clock inputted through the clock buffer. The clock buffer control unit disables the clock buffer of the self refresh entry circuit unit and enables the clock buffer when the clock enable signal is activated. The self refresh escape circuit unit generates the self refresh escape signal by synchronizing with the clock buffer output signal. And, the self refresh signal generation unit(50) generates the signal to define the self refresh period in response to the self refresh entry signal and the self refresh escape signal.