METHOD FOR STACKING VERTICALLY SELF ASSEMBLED QUANTUM DOTS BY USING TEMPERATURE CHANGE METHOD IN CAPPING LAYER FORMATION PROCESS

PURPOSE: A method for stacking vertically self assembled quantum dots by using a temperature change method in capping layer formation process is provided to stack vertically single layer quantum dots by improving surface uniformity of a capping layer. CONSTITUTION: A buffer layer is formed on an upper surface of a semiconductor substrate by performing a growth process using an epitaxial method. The first quantum dot is formed on an upper surface of the buffer layer by using a self assembled growth mode. The first capping layer of the predetermined thickness is formed on an upper surface of the first quantum dot under the predetermined temperature. The second capping layer is formed on an upper surface of the first capping layer under the predetermined temperature. The second quantum dot is formed on the second capping layer.