FERROELECTRIC MEMORY DEVICE EQUIPPED WITH SEMI-CYLINDRICAL CAPACITOR AND FABRICATING METHOD THEREOF TO INCREASE SURFACE AREA OF ELECTRODE

PURPOSE: A ferroelectric memory device equipped with a semi-cylindrical capacitor and fabricating method thereof are provided to increase the surface area of an electrode and capacitance by forming a capacitor with a three-dimensional structure. CONSTITUTION: A plurality of buried contacts(126) are formed on an interlayer dielectric(122a). An oxide layer(128a) is formed on the interlayer dielectric including the buried contacts. An intagliated pattern(130) is formed thereon in order to open each upper part of the buried contacts. A plurality of bottom electrodes(132b) are formed on the inside of the intagliated pattern. A ferroelectric layer(134a) and a top electrode(136a) are sequentially formed on each upper surface of the bottom electrodes.