CAPACITOR OF SEMICONDUCTOR DEVICE HAVING GOOD LEAKAGE CURRENT CHARACTERISTIC AND FABRICATING METHOD THEREOF

PURPOSE: A capacitor of a semiconductor device and a fabricating method thereof are provided to improve a leakage current characteristic by forming a metal silicate layer between metal oxide layers having high dielectric constants. CONSTITUTION: The first conductive layer(48) is formed on a semiconductor substrate. The first metal oxide layer(50a) having a high dielectric constant is formed on the conductive layer. The second metal silicate layer(50b) is formed on the first metal oxide layer. The second metal oxide layer(50c) is formed on the second metal silicate layer. The second conductive layer(52) is formed on the second metal oxide layer. The first metal oxide layer is formed with an aluminum oxide. The second metal oxide is formed with a hafnium oxide.