THIN FILM TRANSISTOR ARRAY SUBSTRATE FABRICATION METHOD FOR REDUCING A FABRICATION COST WHILE OBTAINING RELIABILITY

PURPOSE: A TFT array substrate is provided to further simplify a substrate structure and a fabrication process by adopting the third mask process, and to protect a TFT by using a pattern spacer. CONSTITUTION: Gate lines have a double layer structure. Gate insulating patterns(62) are formed along the...

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Bibliographische Detailangaben
Hauptverfasser:	CHO, HEUNG RYEOL, JANG, YUN GYEONG
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING FREQUENCY-CHANGING NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL LOGIC ELEMENTS OPTICS PHYSICS TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF
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Beschreibung
Zusammenfassung:	PURPOSE: A TFT array substrate is provided to further simplify a substrate structure and a fabrication process by adopting the third mask process, and to protect a TFT by using a pattern spacer. CONSTITUTION: Gate lines have a double layer structure. Gate insulating patterns(62) are formed along the gate lines and gate electrodes(54). Semiconductor patterns(68) are overlapped with the gate electrodes(54) at an interval of the gate insulating patterns(62). Data lines(74) cross the gate lines at an interval of the gate insulating patterns(62). A source electrode(76) is connected to the data lines(74). A drain electrode(78) is opposite to the source electrode(76) at an interval of the semiconductor patterns(68). A pixel electrode(60) is formed in a cell area disposed by crossing the gate lines with the data lines(74).