TRANSPARENT ELECTRODE THIN FILM FOR FORMING OHMIC CONTACT LAYER OF P-TYPE GALLIUM NITRIDE SEMICONDUCTOR

PURPOSE: A transparent electrode thin film for forming an ohmic contact layer of a p-type GaN semiconductor is provided to reduce the electrical loss by improving an electric characteristic. CONSTITUTION: A metal electrode layer(1) is laminated on the surface of a p-type GaN layer(3). The metal elec...

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Bibliographische Detailangaben

Hauptverfasser:	KIM, GYEONG GUK, SUNG, TAE YEON, PARK, SEONG JU, SONG, JUN O
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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