TRANSPARENT ELECTRODE THIN FILM FOR FORMING OHMIC CONTACT LAYER OF P-TYPE GALLIUM NITRIDE SEMICONDUCTOR

TRANSPARENT ELECTRODE THIN FILM FOR FORMING OHMIC CONTACT LAYER OF P-TYPE GALLIUM NITRIDE SEMICONDUCTOR

PURPOSE: A transparent electrode thin film for forming an ohmic contact layer of a p-type GaN semiconductor is provided to reduce the electrical loss by improving an electric characteristic. CONSTITUTION: A metal electrode layer(1) is laminated on the surface of a p-type GaN layer(3). The metal elec...

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Bibliographische Detailangaben
Hauptverfasser: KIM, GYEONG GUK, SUNG, TAE YEON, PARK, SEONG JU, SONG, JUN O
Format: Patent
Sprache:eng ; kor
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:PURPOSE: A transparent electrode thin film for forming an ohmic contact layer of a p-type GaN semiconductor is provided to reduce the electrical loss by improving an electric characteristic. CONSTITUTION: A metal electrode layer(1) is laminated on the surface of a p-type GaN layer(3). The metal electrode layer is formed with one selected from a group including Ni, Pd, Pt, Ru, Rh, Ir, Ta, Cr, Mn, Mo, Tc, W, Re, and Fe. A capping layer(2) is laminated on the surface of the metal electrode layer. The capping layer is formed with one or more selected from a group including ZnO, In2O3, Sn2O3, Cd2SnO4, DcInsO4, MgxZn1-O(0