METHOD FOR FORMING GATE PROFILE IN FABRICATING SEMICONDUCTOR DEVICE

PURPOSE: A method for forming a gate profile in fabricating a semiconductor device is provided to improve reduced repeatability and reliability caused by ununiformity of a notch by forming a gate profile in a way that a notch is not generated when a gate CD(critical dimension) is decreased. CONSTITU...

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Bibliographische Detailangaben
1. Verfasser:	SEO, YEONG HUN
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PURPOSE: A method for forming a gate profile in fabricating a semiconductor device is provided to improve reduced repeatability and reliability caused by ununiformity of a notch by forming a gate profile in a way that a notch is not generated when a gate CD(critical dimension) is decreased. CONSTITUTION: A gate oxide is deposited. Polysilicon for forming a gate is deposited on the gate oxide. By using an end pointer, the polysilicon is etched until the gate oxide is exposed. Residual polysilicon is eliminated to form a gate profile.