THIN FILM CAPACITOR AND FABRICATING METHOD THEREOF

PURPOSE: A thin film capacitor and a fabricating method thereof are provided to maintain capacitance of a capacitor and miniaturize the size of the capacitor by increasing a contact area among the first electrode layer, a dielectric layer, and the second electrode layer. CONSTITUTION: A first linear via and a second linear via are formed by etching selectively an interlayer dielectric(12) of a semiconductor substrate(11). Each inside of the first linear via and the second linear via is filled by a first metal material(14). A capacitor hole(200) is formed by etching the interlayer dielectric between the first linear via and the second linear via. A dielectric layer(16) is formed on an inner wall of the capacitor hole. The capacitor hole is buried by forming a second metal material(17) on the dielectric layer.