THIN FILM CAPACITOR AND FABRICATING METHOD THEREOF

PURPOSE: A thin film capacitor and a fabricating method thereof are provided to increase a contact area among the first electrode layer, a dielectric layer, and the second electrode layer by forming a projection on a bottom electrode layer and forming a sidewall on a lateral part of the projection. CONSTITUTION: A bottom insulating layer(12) is formed on an upper surface of a semiconductor substrate(11). A first electrode layer(16) is formed on an upper surface of the bottom insulating layer. A dielectric layer(17) is formed on an upper surface of the first electrode layer. A second electrode layer(18) is formed on an upper surface of the dielectric layer. A plurality of linear sidewalls(15') are projected from the upper surface of the bottom insulating layer. A plurality of projections are formed on each surface of the first electrode layer, the dielectric layer, and the second electrode layer since the first electrode layer is formed on the bottom insulating layer including the linear sidewalls.