THIN FILM CAPACITOR AND MANUFACTURING METHOD THEREOF

PURPOSE: A thin film capacitor and a manufacturing method thereof are provided to improve the capacitance and to reduce the size by using grooves of a lower insulating layer. CONSTITUTION: A lower insulating layer(12) and a thin film capacitor are sequentially formed on a semiconductor substrate structure(11). The capacitor includes a first electrode layer(14), a dielectric film(15) on the first electrode layer and a second electrode layer(16) on the dielectric film. A plurality of grooves(100) are formed on the lower insulating layer, thereby forming a plurality of grooves on the capacitor.